At the High Voltage Electron Microscopy Laboratory, we possess two electron microscopies: an ultra-high voltage electron microscope with the spatial resolution of 1Å, and another electron microscopy operated at 400 kV equipped with elemental and electronic state analyzers. These facilities have supported approximately 30 laboratories within the University and collaborative research projects from outside institutions. We have proceeded with research using two advantages of the ultra-high voltage electron microscopy: its ultra-high spatial resolution and the direct detection of the projected potential of specimens via structural imaging. We have developed techniques such as light element imaging and ultra-high-resolution elemental mapping based on differences in potential, and applied these techniques to research on metals, ceramics, and semiconductor materials. Using another electron microscopy, we have proceeded with structural observation and chemical analysis of grain boundaries and interfaces, and in situ observation with specialized TEM holders. In situ observations at the atomic level have enabled direct visualization of crack propagation paths and microstructural deformation processes, leading to significant progress in related fields.